PART |
Description |
Maker |
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
FHX06X FHX04X FHX05X |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET GaAs FET & HEMT Chips
|
Eudyna Devices Inc Fujitsu Media Devices Limited
|
FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET X-Band Internally Matched FET
|
Eudyna Devices Inc SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
NE6501077 |
10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC[NEC] ETC
|
FLL21E060IY |
S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
|
Eudyna Devices Inc
|
MGF0911A 0911A |
From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应 2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
NE3520S03-T1D-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
California Eastern Labs
|
NE3521M04-T2B-A NE3521M04-T2-A |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|